BSZ060NE2LSATMA1 vs IPT007N06NATMA1 Comparison
Detailed side-by-side comparison of BSZ060NE2LSATMA1 by Infineon and IPT007N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ060NE2LSATMA1
BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
BSZ060NE2LSATMA1 β ActiveInfineon
IPT007N06NATMA1
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
IPT007N06NATMA1 β ActiveSpecification Comparison
| Parameter | BSZ060NE2LSATMA1 | IPT007N06NATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.27 | $2.84 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ060NE2LSATMA1 | β |
| Technology | OptiMOSβ’ (N-Channel Trench MOSFET) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | β |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | β |
| Pulsed Drain Current (IDM) | 44 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 26 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +175 C (TJ) |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-HSOF-8-1 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | MSL 1 (per JEDEC J-STD-020) |
| Shipping Packaging | Tape & Reel | β |
| Continuous Drain Current (ID, TC=25C) | β | 300 A |
| On-Resistance (RDS(on), VGS=10V max) | β | 0.75 mOhm |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | β | 375 W |
| Configuration | β | Single N-channel |
| Gate Charge (QG) | β | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | β | [DATA_NEEDED: RthJC] |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Standard Pack Quantity | β | 3000 (Tape & Reel) |