C3M0080120D vs IMZ120R080M1H Comparison
Detailed side-by-side comparison of C3M0080120D by Wolfspeed and IMZ120R080M1H by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | C3M0080120D | IMZ120R080M1H |
|---|---|---|
| Brand | Wolfspeed | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Wolfspeed | Infineon Technologies |
| Part Number | C3M0080120D | — |
| Technology | Silicon Carbide (SiC) Power MOSFET, 3rd generation (C3M) | Silicon Carbide (SiC) trench MOSFET |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (Vdss) | 1200 V | — |
| On-Resistance Rds(on) typ | 80 mOhm | — |
| Continuous Drain Current (Tc) | 36 A | — |
| Power Dissipation (Tc) | 192 W | — |
| Gate-Source Voltage (Vgs max) | -10 V to +25 V (recommended +15/-3 V) | — |
| Operating Junction Temperature | -55 C to +175 C | — |
| Package | TO-247-3 (through-hole, 3 leads + tab) | PG-TO247-4 |
| Mounting Type | Through Hole | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Body Diode | Intrinsic, zero reverse recovery (Qrr) | — |
| Product Family | — | CoolSiC 1200V SiC Trench MOSFET |
| Drain-to-Source Voltage (VDS) | — | 1200 V |
| On-State Resistance RDS(on) | — | 80 mOhm at Tj = 25 C |
| Gate Threshold Voltage VGS(th) | — | 4.5 V (benchmark) |
| Turn-Off Gate Voltage | — | 0 V |
| Transistor Polarity | — | N-Channel |
| Mounting Style | — | Through Hole |
| Robust Body Diode | — | Yes, supports hard commutation |
| Threshold-free On-state | — | Yes |
| Switching Losses | — | Very low (per datasheet) |
| Recommended Operating Margin | — | <= 80% of maximum ratings |
| RoHS | — | Compliant (per Mouser listing) |