C3M0080120D vs IMZ120R080M1H Comparación
Comparación detallada lado a lado de C3M0080120D por Wolfspeed y IMZ120R080M1H por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | C3M0080120D | IMZ120R080M1H |
|---|---|---|
| Marca | Wolfspeed | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Manufacturer | Wolfspeed | Infineon Technologies |
| Part Number | C3M0080120D | — |
| Technology | Silicon Carbide (SiC) Power MOSFET, 3rd generation (C3M) | Silicon Carbide (SiC) trench MOSFET |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (Vdss) | 1200 V | — |
| On-Resistance Rds(on) typ | 80 mOhm | — |
| Continuous Drain Current (Tc) | 36 A | — |
| Power Dissipation (Tc) | 192 W | — |
| Gate-Source Voltage (Vgs max) | -10 V to +25 V (recommended +15/-3 V) | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | TO-247-3 (through-hole, 3 leads + tab) | PG-TO247-4 |
| Tipo de montaje | Through Hole | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Body Diode | Intrinsic, zero reverse recovery (Qrr) | — |
| Product Family | — | CoolSiC 1200V SiC Trench MOSFET |
| Drain-to-Source Voltage (VDS) | — | 1200 V |
| On-State Resistance RDS(on) | — | 80 mOhm at Tj = 25 C |
| Gate Threshold Voltage VGS(th) | — | 4.5 V (benchmark) |
| Turn-Off Gate Voltage | — | 0 V |
| Transistor Polarity | — | N-Channel |
| Estilo de montaje | — | Through Hole |
| Robust Body Diode | — | Yes, supports hard commutation |
| Threshold-free On-state | — | Yes |
| Switching Losses | — | Very low (per datasheet) |
| Recommended Operating Margin | — | <= 80% of maximum ratings |
| RoHS | — | Compliant (per Mouser listing) |