CY14B101J2-SXI vs CY14B101J2 Comparison

Detailed side-by-side comparison of CY14B101J2-SXI by Infineon and CY14B101J2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter CY14B101J2-SXI CY14B101J2
Brand Infineon Infineon
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Memory Type nvSRAM (Non-Volatile SRAM) nvSRAM (Non-Volatile SRAM)
Memory Size 1 Mbit —
Organization 128K x 8 128K x 8
Interface I2C Serial (2-wire) I2C (Serial)
Maximum Clock Frequency 3.4 MHz —
Data Retention 20 years 20 years
Density 1049 kbits 1 Mbit (1049 kbits)
Package Type 8-SOIC (0.300 inch, MO-119 family) —
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Supply Voltage [DATA_NEEDED: supply voltage range] [DATA_NEEDED: supply voltage range]
Write Endurance Unlimited SRAM reads/writes; non-volatile STORE endurance [DATA_NEEDED: STORE endurance] —
Store Mechanism Software / auto-store with external VCAP capacitor —
RoHS Status RoHS Compliant RoHS Compliant
Packaging Tube —
Max Clock Frequency — 3.4 MHz
Store Cycles — [DATA_NEEDED: minimum non-volatile store cycles]
SRAM Read/Write Cycles — Unlimited (per nvSRAM architecture)
Address Pins — A0, A1, A2
Automatic Store — Yes (internal power-fail detection)
Package — 16-SOIC (MO-119, 0.300 inch)
Real Time Clock — [DATA_NEEDED: RTC availability]

Datasheets & Resources

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