CY14V104LA vs CY14V104LA-BA25XIT Comparison

Detailed side-by-side comparison of CY14V104LA by Infineon and CY14V104LA-BA25XIT by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
CY14V104LA-BA25XIT CY14V104LA-BA25XIT - 4Mb nvSRAM 25ns 48-FBGA | Infineon

CY14V104LA-BA25XIT - 4Mb nvSRAM 25ns 48-FBGA | Infineon

CY14V104LA-BA25XIT ✓ Active

Specification Comparison

Parameter CY14V104LA CY14V104LA-BA25XIT
Brand Infineon Infineon
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $10.85 $3.36
Density 4 Mbit (512 K x 8 / 256 K x 16) —
Memory Type Non-Volatile SRAM (nvSRAM) nvSRAM (non-volatile SRAM)
Operating Voltage 3.3 V (3.0 V min, 3.6 V max) —
Access Time 25 ns (BA25) or 45 ns (BA45) 25 ns
Interface Parallel (asynchronous SRAM-compatible) Parallel
Bus Width x8 / x16 selectable (BYTE pin) —
Package 48-FBGA (6 x 10 x 1.20 mm) 48-FBGA (6x10 mm), TFBGA
Operating Temperature -40 C to +85 C (industrial) —
STORE Time (typical) [DATA_NEEDED: STORE time in ms] —
RECALL Time (typical) [DATA_NEEDED: RECALL time in ms] —
Active Supply Current (Icc) [DATA_NEEDED: Icc active mA] —
Standby Current (Isb) [DATA_NEEDED: Isb uA] —
Hardware STORE Pin HSB (active low) —
Auto STORE on VCC Drop Yes (integrated VCc monitor) —
Read/Write Endurance Unlimited (SRAM side) —
Data Retention [DATA_NEEDED: retention years] 20 years
RoHS Status Compliant Compliant
Mounting Type Surface Mount Surface Mount
Memory Size — 4 Mbit
Organization — 512K x 8
Core Supply Voltage (VCC) — 3.0 V to 3.6 V
I/O Supply Voltage (VCCQ) — 1.65 V to 1.95 V
STORE Cycles — 1 million
Read/Write/RECALL Cycles — Infinite
AutoStore — Yes (external VCAP 61 uF to 180 uF)
Non-volatile Technology — QuantumTrap
Temperature Grade — Industrial

Datasheets & Resources

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