CY14V104LA vs CY14V104LA-BA25XIT 对比
详细并排对比 CY14V104LA 出自 Infineon 和 CY14V104LA-BA25XIT 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | CY14V104LA | CY14V104LA-BA25XIT |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $10.85 | $3.36 |
| Density | 4 Mbit (512 K x 8 / 256 K x 16) | — |
| 存储器类型 | Non-Volatile SRAM (nvSRAM) | nvSRAM (non-volatile SRAM) |
| Operating Voltage | 3.3 V (3.0 V min, 3.6 V max) | — |
| Access Time | 25 ns (BA25) or 45 ns (BA45) | 25 ns |
| 接口 | Parallel (asynchronous SRAM-compatible) | Parallel |
| Bus Width | x8 / x16 selectable (BYTE pin) | — |
| 封装 | 48-FBGA (6 x 10 x 1.20 mm) | 48-FBGA (6x10 mm), TFBGA |
| 工作温度 | -40 C to +85 C (industrial) | — |
| STORE Time (typical) | [DATA_NEEDED: STORE time in ms] | — |
| RECALL Time (typical) | [DATA_NEEDED: RECALL time in ms] | — |
| Active Supply Current (Icc) | [DATA_NEEDED: Icc active mA] | — |
| Standby Current (Isb) | [DATA_NEEDED: Isb uA] | — |
| Hardware STORE Pin | HSB (active low) | — |
| Auto STORE on VCC Drop | Yes (integrated VCc monitor) | — |
| Read/Write Endurance | Unlimited (SRAM side) | — |
| Data Retention | [DATA_NEEDED: retention years] | 20 years |
| RoHS 状态 | Compliant | Compliant |
| 安装类型 | Surface Mount | Surface Mount |
| 存储容量 | — | 4 Mbit |
| 存储组织 | — | 512K x 8 |
| Core Supply Voltage (VCC) | — | 3.0 V to 3.6 V |
| I/O Supply Voltage (VCCQ) | — | 1.65 V to 1.95 V |
| STORE Cycles | — | 1 million |
| Read/Write/RECALL Cycles | — | Infinite |
| AutoStore | — | Yes (external VCAP 61 uF to 180 uF) |
| Non-volatile Technology | — | QuantumTrap |
| Temperature Grade | — | Industrial |