CY14V104LA vs CY14V104LA-BA25XIT Vergleich
Detaillierter Direktvergleich von CY14V104LA von Infineon und CY14V104LA-BA25XIT von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | CY14V104LA | CY14V104LA-BA25XIT |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,85 | $3,36 |
| Density | 4 Mbit (512 K x 8 / 256 K x 16) | — |
| Speichertyp | Non-Volatile SRAM (nvSRAM) | nvSRAM (non-volatile SRAM) |
| Operating Voltage | 3.3 V (3.0 V min, 3.6 V max) | — |
| Access Time | 25 ns (BA25) or 45 ns (BA45) | 25 ns |
| Schnittstelle | Parallel (asynchronous SRAM-compatible) | Parallel |
| Bus Width | x8 / x16 selectable (BYTE pin) | — |
| Gehäuse | 48-FBGA (6 x 10 x 1.20 mm) | 48-FBGA (6x10 mm), TFBGA |
| Betriebstemperatur | -40 C to +85 C (industrial) | — |
| STORE Time (typical) | [DATA_NEEDED: STORE time in ms] | — |
| RECALL Time (typical) | [DATA_NEEDED: RECALL time in ms] | — |
| Active Supply Current (Icc) | [DATA_NEEDED: Icc active mA] | — |
| Standby Current (Isb) | [DATA_NEEDED: Isb uA] | — |
| Hardware STORE Pin | HSB (active low) | — |
| Auto STORE on VCC Drop | Yes (integrated VCc monitor) | — |
| Read/Write Endurance | Unlimited (SRAM side) | — |
| Data Retention | [DATA_NEEDED: retention years] | 20 years |
| RoHS-Status | Compliant | Compliant |
| Montageart | Surface Mount | Surface Mount |
| Speichergröße | — | 4 Mbit |
| Speicherorganisation | — | 512K x 8 |
| Core Supply Voltage (VCC) | — | 3.0 V to 3.6 V |
| I/O Supply Voltage (VCCQ) | — | 1.65 V to 1.95 V |
| STORE Cycles | — | 1 million |
| Read/Write/RECALL Cycles | — | Infinite |
| AutoStore | — | Yes (external VCAP 61 uF to 180 uF) |
| Non-volatile Technology | — | QuantumTrap |
| Temperature Grade | — | Industrial |