FQP50N06 vs IRF1010ESTRLPBF Comparison

Detailed side-by-side comparison of FQP50N06 by onsemi and IRF1010ESTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF1010ESTRLPBF IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF ✓ Active

Specification Comparison

Parameter FQP50N06 IRF1010ESTRLPBF
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.00
Manufacturer onsemi (formerly Fairchild Semiconductor) —
Part Number FQP50N06 —
Transistor Type N-Channel MOSFET —
Technology Planar Stripe DMOS HEXFET planar
Drain-Source Voltage (V(BR)DSS) 60 V —
Continuous Drain Current (ID) at Tc 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD) at Tc 120 W —
On-Resistance Rds(on) max at VGS=10V [DATA_NEEDED: Rds(on) max] —
On-Resistance Rds(on) typical at VGS=10V 0.022 ohm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] 86.6 nC
Operating Temperature Range -55C to +175C (junction) —
Package TO-220-3 (through-hole) D2PAK (TO-263)
Mounting Type Through Hole Surface Mount
Channel Mode Enhancement —
RoHS Status Compliant —
Lead-Free Yes —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) @ Tc — 84 A
Power Dissipation (Pd) @ Tc — 200 W
On-Resistance (RDS on) @ VGS=10V — 12 mOhm
Operating Mode — Enhancement
Drive Voltage — 10 V (standard level)
Qualification — JEDEC standard qualified
Structure — Planar cell (wide SOA)
Avalanche Testing — 100% avalanche energy tested
Sourcing — Multi-vendor, broad distribution availability
Pb-Free / RoHS — PBF (Pb-free) suffix

Datasheets & Resources

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