FQP50N06 vs IRF1010ESTRLPBF 비교
다음의 상세 나란히 비교: FQP50N06 제조: onsemi 및 IRF1010ESTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | FQP50N06 | IRF1010ESTRLPBF |
|---|---|---|
| 브랜드 | onsemi | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.58 | $0.00 |
| Manufacturer | onsemi (formerly Fairchild Semiconductor) | — |
| Part Number | FQP50N06 | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Technology | Planar Stripe DMOS | HEXFET planar |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD) at Tc | 120 W | — |
| On-Resistance Rds(on) max at VGS=10V | [DATA_NEEDED: Rds(on) max] | — |
| On-Resistance Rds(on) typical at VGS=10V | 0.022 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | 86.6 nC |
| 동작 온도 범위 | -55C to +175C (junction) | — |
| 패키지 | TO-220-3 (through-hole) | D2PAK (TO-263) |
| 실장 유형 | Through Hole | Surface Mount |
| Channel Mode | Enhancement | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ Tc | — | 84 A |
| Power Dissipation (Pd) @ Tc | — | 200 W |
| On-Resistance (RDS on) @ VGS=10V | — | 12 mOhm |
| Operating Mode | — | Enhancement |
| Drive Voltage | — | 10 V (standard level) |
| Qualification | — | JEDEC standard qualified |
| Structure | — | Planar cell (wide SOA) |
| Avalanche Testing | — | 100% avalanche energy tested |
| Sourcing | — | Multi-vendor, broad distribution availability |
| Pb-Free / RoHS | — | PBF (Pb-free) suffix |