H5AN8G6NCJR-XXC vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of H5AN8G6NCJR-xxC by SK hynix and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NCJR-xxC | H5AN8G6NDJR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 2666 Mbps (VKC speed grade) | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Supply | 2.5 V | — |
| Operating Temperature (TC) | 0°C to 95°C | — |
| Package | 96-ball FBGA | 96-ball FBGA (13mm x 7.5mm) |
| Number of Banks | 8 | — |
| Burst Length | 8, 4 (with burst chop) | 8 (BL8), 4 (BC4) |
| On-Die Termination (ODT) | Supported | — |
| Self-Refresh | Temperature-compensated (TCSR) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Mounting Type | Surface Mount | — |
| Supply Voltage | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| CAS Latency | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |