H5AN8G6NCJR-XXC vs K4B4G1646D-BYK00 Comparison
Detailed side-by-side comparison of H5AN8G6NCJR-xxC by SK hynix and K4B4G1646D-BYK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NCJR-xxC | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $7.50 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4 Gb |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2666 Mbps (VKC speed grade) | 1600 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Supply | 2.5 V | — |
| Operating Temperature (TC) | 0°C to 95°C | — |
| Package | 96-ball FBGA | 96-ball TFBGA |
| Number of Banks | 8 | — |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination (ODT) | Supported | — |
| Self-Refresh | Temperature-compensated (TCSR) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Mounting Type | Surface Mount | — |
| Supply Voltage | — | 1.35 V (also operates at 1.5 V) |
| Number of Terminals | — | 96 |
| Operating Temperature | — | 0°C to 85°C |
| CAS Latency | — | Programmable |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Halogen Free | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |