H5AN8G6NDJR-UHC vs MT40A512M16JY-075E Comparison

Detailed side-by-side comparison of H5AN8G6NDJR-UHC by SK hynix and MT40A512M16JY-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G6NDJR-UHC

H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC βœ“ Active
Micron Technology
MT40A512M16JY-075E

MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-075E βœ“ Active

Specification Comparison

Parameter H5AN8G6NDJR-UHC MT40A512M16JY-075E
Brand SK hynix Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $34.60 $30.50
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb β€”
Organization 512M x 16 512M x 16
Speed Grade 3200 Mbps (PC4-25600) β€”
Supply Voltage (VDD) 1.2 V β€”
Supply Voltage (VDDQ) 1.2 V β€”
Number of Terminals 96 β€”
Package FBGA-96 (13x7.5 mm) 96-FBGA (8x14)
Package Shape RECTANGULAR β€”
JESD-30 Code R-PBGA-B96 β€”
Maximum Operating Temperature 85 Β°C β€”
Minimum Operating Temperature 0 Β°C β€”
RoHS Compliant β€”
Lead-Free Yes β€”
Halogen-Free Yes β€”
Additional Features Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling β€”
Memory Size β€” 8 Gbit
Clock Frequency β€” 1.33 GHz
Data Rate β€” 2666 MT/s
Supply Voltage (VDD/VDDQ) β€” 1.14V to 1.26V
VPP Voltage β€” 2.5V (-125mV, +250mV)
Interface β€” Parallel
Mounting Type β€” Surface Mount
Operating Temperature Range β€” 0Β°C to +95Β°C (TC)
Refresh Time β€” 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C
RoHS Status β€” Compliant
Features β€” Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC
I/O Type β€” 1.2V pseudo open-drain

Datasheets & Resources

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