H5AN8G6NDJR vs K4A8G085WB-BCTD Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and K4A8G085WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
K4A8G085WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR | K4A8G085WB-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.00 | $7.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 Mbps (PC4-25600) |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-ball FBGA (13mm x 7.5mm) | FBGA-78 (TFBGA) |
| Number of Terminals | 96 | 78 |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | 8 (BL8) |
| CAS Latency | 22 cycles (at 3200 Mbps) | — |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | R-PBGA-B78 |
| RoHS | Compliant | — |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Memory Size | — | 8 Gb (1G x 8) |
| Speed Bin | — | CL22-22-22 |
| Operating Temperature | — | 0°C to +95°C (TC) |
| On-Die Termination | — | Yes (ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask Function | — | Yes |
| RoHS Status | — | Compliant |