H5AN8G6NDJR vs NT5AD512M16A4-GZ Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and NT5AD512M16A4-GZ by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR | NT5AD512M16A4-GZ |
|---|---|---|
| Brand | SK hynix | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.00 | $8.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps (DDR4-3200) | — |
| Supply Voltage | 1.2 V | 1.2V |
| Package | 96-ball FBGA (13mm x 7.5mm) | TFBGA-96 |
| Number of Terminals | 96 | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS Latency | 22 cycles (at 3200 Mbps) | — |
| Access Mode | Multi Bank Page Burst | Four Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | Compliant |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Maximum Clock Frequency | — | 1200 MHz |
| Data Bus Width | — | 16 bits |
| Interleaved Burst Length | — | 4, 8 |
| Operating Temperature Range | — | Commercial and Industrial |
| Lead-Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| CRC Function | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling Function | — | Yes |
| ZQ Calibration Function | — | Yes |