H5AN8G8NAFR-PBC vs H5AN8G8NCJR-PBC Comparison
Detailed side-by-side comparison of H5AN8G8NAFR-PBC by SK hynix and H5AN8G8NCJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NAFR-PBC | H5AN8G8NCJR-PBC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.20 | $2.40 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 1G x 8 | 1G x 8 (x8) |
| Supply Voltage | 1.2 V | — |
| Package | FBGA-78 | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Interface | DDR4 (double data rate, synchronized to clock) | — |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) | — |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) | — |
| Process Technology | CMOS | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Status | Compliant | Lead-Free & Halogen-Free |
| Datasheet Revision | Rev. 1.2 / July 2017 | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Memory Size | — | 8 Gb (1 GB) |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Data Rate | — | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| Features | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |