H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix
MPN: H5AN8G8NCJR-PBC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.95 | $29.50 |
| 100 | $2.7 | $270.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.4 | $2,400.00 |
Drop-in alternatives for H5AN8G8NCJR-PBC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →H5AN8G8NCJR-PBC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 8 Gb (1 GB) |
| Organization | 1G x 8 (x8) |
| Supply Voltage (VDD) | 1.2 V |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) |
| Package | 78-ball FBGA |
| Mounting Type | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | 8 internal banks, bank-group architecture |
| Burst Length | BL8 |
| Features | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) |
| RoHS Status | Lead-Free & Halogen-Free |
| Refresh | Auto-refresh and self-refresh |
| Typical Applications | PC/server main memory, embedded solder-down memory |
H5AN8G8NCJR-PBC 78-ball fbga Pin Configuration Guide
Complete pinout information for H5AN8G8NCJR-PBC (78-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5AN8G8NCJR-PBC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN8G8NCJR-PBC is suitable for 6 applications: PC and Workstation Main Memory (UDIMM/SODIMM), Server Memory Modules (RDIMM/LRDIMM), Embedded x86 / ARM Solder-Down Memory, Networking and Telecom Line Cards, Consumer Electronics and Smart TV Platforms, Test, Measurement and Industrial Computing.
PC and Workstation Main Memory (UDIMM/SODIMM)
The H5AN8G8NCJR-PBC is a mainstream candidate for desktop and workstation memory modules, where 8Gb x8 DDR4 components populate UDIMMs and SODIMMs in singles or pairs to reach 8-32 GB capacities. Its 1.2 V operation keeps module power within JEDEC DDR4 budgets, and its CJR die revision is one of the most widely validated ICs in the consumer DIMM ecosystem, easing SPD compatibility across motherboard memory-training routines. On the module, the chip operates in fly-by address topology with on-die termination absorbing line reflections at data rates up to the PBC speed bin. Designers should program SPD bytes to match the exact speed grade so host controllers apply the correct CL-tRCD-TRP timings; mismatched SPD versus silicon is a common cause of training failure on first boot.
Recommended
Server Memory Modules (RDIMM/LRDIMM)
Server RDIMMs register the address/command bus before it reaches the DRAM, and 8Gb x8 devices such as the H5AN8G8NCJR-PBC are the density workhorse of registered DDR4 modules for two-socket platforms. The part's bank-group architecture sustains the sequential and random access patterns typical of virtualization and database workloads, while 1.2 V VDDQ keeps per-module power within thermal limits of ECC RDIMM designs. Because servers commonly mix module vendors, the JEDEC-standard 78-ball FBGA footprint lets procurement substitute SK hynix, Samsung (K4A8G165WC series), or Micron (MT40A1G8 series) devices at the same speed bin. Memory-controller training and RCD compatibility must be re-verified for each die revision introduced into a qualified server BOM.
Recommended
Embedded x86 / ARM Solder-Down Memory
In embedded computing - industrial PCs, edge servers, network appliances - the H5AN8G8NCJR-PBC is soldered directly on the baseboard rather than on a socketed module, saving height and improving vibration reliability. The 78-ball FBGA x8 footprint allows one to four devices to be bused to the host memory controller with fly-by C/A routing and per-byte-lane DQ/DQS matching. The CJR die's broad availability makes it a safe multi-year sourcing choice for long-lifecycle embedded programs, and the identical JEDEC footprint means H5AN8G8NAFR or cross-brand 8Gb x8 parts can be second-sourced without PCB respin. Firmware must implement memory training at every boot because solder-down DDR4 has no SPD EEPROM to store calibrated timings.
Recommended
Networking and Telecom Line Cards
Switch, router, and 5G baseband line cards use x8 DDR4 components like the H5AN8G8NCJR-PBC as packet-buffer and table memory, where the 1.2 V supply reduces power per gigabit of buffering capacity - a direct contributor to the watts-per-port budget in high-density chassis. The BL8 burst and bank-group architecture match the long sequential bursts of packet DMA engines, and on-die termination simplifies multi-drop point-to-point routing on electrically long line cards. Telecom designs value the CJR die's large installed base for supply-chain resilience; cross-qualification with Samsung K4A8G165WC-BCRC provides a second source on the same footprint. Thermal design must account for continuous self-refresh-free operation at elevated card ambient temperatures.
Recommended
Consumer Electronics and Smart TV Platforms
Set-top boxes, smart TVs, and gaming peripherals built on SoCs with DDR4 controllers use solder-down 8Gb x8 devices such as the H5AN8G8NCJR-PBC to provide 1 GB of unified memory for application processors and graphics. The 1.2 V core and SSTL12 interface meet the stringent standby power targets of consumer platforms, and the x8 organization reduces ball count per bit versus x16 in cost-sensitive designs. Because consumer SoCs support a limited set of validated speed bins, firmware should select the PBC timing set explicitly; a faster VKC-binned part can substitute but not vice versa. The identical 78-ball FBGA footprint shared with H5AN8G8NAFR parts allows die-revision transitions without PCB changes during the product's life cycle.
Recommended
Test, Measurement and Industrial Computing
Bench instruments, machine-vision controllers, and industrial box PCs rely on DDR4 components like the H5AN8G8NCJR-PBC for frame buffers and working memory, where the 8Gb density allows single-device 1 GB configurations that simplify BOM and layout. The CJR die's proven reliability across wide ambient ranges suits industrial enclosures, and self-refresh mode supports rapid-resume designs that must retain context through short power interruptions. Industrial buyers benefit from the JEDEC-standard footprint: second-sourcing with Micron MT40A1G8AG-062E or SK hynix AFR-die parts avoids single-vendor allocation risk without a respin. Design teams should derate timing margins at elevated temperatures and confirm the datasheet refresh requirements across the qualified ambient range.
Recommended
Recommended Products Summary
Engineering reference data for H5AN8G8NCJR-PBC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN8G8NAFR-PBC | H5AN8G8NAFR-VKC | K4A8G165WC-BCRC | MT40A1G8AG-062E |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same (JEDEC x8 DDR4) | 78-ball FBGA - same (JEDEC x8 DDR4) |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | x8 (1G x 8) | x8 | x8 | x8 | x8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Revision | CJR | AFR | AFR | Samsung 8Gb DDR4 die | Micron 8Gb DDR4 die |
| Speed Grade Suffix | PBC | PBC (matched) | VKC (higher bin) | BCRC | -062E |
| Data Rate | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Compliance | Lead-Free & Halogen-Free | Lead-Free & Halogen-Free (SK hynix DDR4) | Lead-Free & Halogen-Free (SK hynix DDR4) | RoHS DDR4 | RoHS DDR4 |
Key Differentiators
- Matched-speed same-family second source (vs H5AN8G8NAFR-PBC)
- Cross-brand footprint compatibility (vs K4A8G165WC-BCRC)
- CJR die ecosystem maturity (vs MT40A1G8AG-062E)
Design Notes
Route the address/command/control bus in fly-by topology with daisy-chained termination, per JEDEC DDR4 module and SoC layout guides. Match DQ to its DQS strobe within tight per-byte-lane skew budgets and keep all byte lanes within the controller-specified length window. Use a continuous VDD/VDDQ plane pair with one decoupling network per device; DDR4's lower 1.2 V swing leaves less noise margin than DDR3, so plane integrity directly affects training margins. Avoid routing DDR4 signals across plane splits or near switching regulators.
The H5AN8G8NCJR-PBC requires 1.2 V VDD/VDDQ plus the DDR4 VPP rail; size the VDDQ regulator for the sum of peak I/O current across all devices sharing the rail, including termination current. Estimated: for a 2-device x8 bus with typical DDR4 8Gb device currents, budget several hundred mA headroom above datasheet IDD averages. Sequence VPP and VDD per the memory controller power-rail spec, and verify brownout behavior - DDR4 does not tolerate undervoltage during active bursts without corrupting data.
Do not interchange speed-bin suffixes without requalification: a -PBC part substituted by a slower-binned device can fail timing closure, and a faster bin may exceed cost targets or require SPD/controller profile changes. On solder-down designs there is no SPD EEPROM, so firmware must store calibrated training results for the exact die revision (CJR versus AFR); swapping die revisions without retraining can cause boot failures on some SoC platforms. Always verify the exact -PBC data rate against the SK hynix speed-bin table before release.
Compliance Information
Datasheet listing for H5AN8G8NCJR-XXC states Lead-Free & Halogen-Free. REACH and conflict-minerals status not stated in provided data.
