H5AN8G8NAFR-PBC vs K4A8G085WC-BCTD Comparison
Detailed side-by-side comparison of H5AN8G8NAFR-PBC by SK hynix and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time BuySpecification Comparison
| Parameter | H5AN8G8NAFR-PBC | K4A8G085WC-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Last Time Buy |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.20 | $50.85 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | — |
| Package | FBGA-78 | 78-ball FBGA (78FBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Interface | DDR4 (double data rate, synchronized to clock) | — |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) | — |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) | — |
| Process Technology | CMOS | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Datasheet Revision | Rev. 1.2 / July 2017 | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Data Rate | — | 2666 Mbps (PC4-2133) |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Interface Type | — | Synchronous, parallel |