H5AN8G8NAFR-RDC vs K4A8G085WC-BCRC Comparison
Detailed side-by-side comparison of H5AN8G8NAFR-RDC by SK hynix and K4A8G085WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NAFR-RDC | K4A8G085WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $4.30 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 (x8) | 1G x 8 |
| Interface | DDR4 (Double Data Rate 4) | — |
| Speed Grade | -RDC (DDR4-2666 class) | — |
| Data Rate | 2666 MT/s (per -R speed grade suffix) | 2400 Mbps (DDR4-2400) |
| Core Supply Voltage (VDD) | 1.2 V | — |
| I/O Supply Voltage (VDDQ) | 1.2 V | — |
| Wordline Supply (VPP) | 2.5 V | — |
| Banks / Bank Groups | 16 banks / 4 bank groups (DDR4 8Gb architecture) | — |
| Burst Length | 8 (BL8) | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Package | 78-ball FBGA | 78-ball FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: Operating Temperature range] | 0C to +95C |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Status | Compliant | Compliant |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | — |
| Supply Voltage | — | 1.2 V |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Refresh | — | Auto/Self refresh |