H5AN8G8NDJR vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of H5AN8G8NDJR by SK hynix and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NDJR | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 1G x 8 | — |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V (max 1.26 V) |
| VDDQ | 1.2 V | — |
| VPP | 2.5 V | — |
| Operating Temperature | 0°C to +95°C (Tc) | — |
| Package | FBGA-78 (7.5x11 mm) | FBGA-96 (13x7.5 mm) |
| CAS Latency | 22 (typical) | — |
| tRCD | 22 ns | — |
| tRP | 22 ns | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| Self-Refresh Current | 30 mA (typical) | — |
| Active Standby Current | 60 mA (typical) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| Halogen Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |