H5AN8G8NDJR vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of H5AN8G8NDJR by SK hynix and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NDJR | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.50 | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 1G x 8 | β |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V (max 1.26 V) |
| VDDQ | 1.2 V | β |
| VPP | 2.5 V | β |
| Operating Temperature | 0Β°C to +95Β°C (Tc) | β |
| Package | FBGA-78 (7.5x11 mm) | FBGA-96 (13x7.5 mm) |
| CAS Latency | 22 (typical) | β |
| tRCD | 22 ns | β |
| tRP | 22 ns | β |
| Burst Length | 8 and 4 (with burst chop) | β |
| Self-Refresh Current | 30 mA (typical) | β |
| Active Standby Current | 60 mA (typical) | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Memory Size | β | 8 Gb |
| Memory Organization | β | 512M x16 |
| Number of Terminals | β | 96 |
| Maximum Operating Temperature | β | 85 Β°C |
| Input/Output Type | β | COMMON |
| Halogen-Free | β | Yes |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Data Mask | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| CRC Function | β | Yes |
| Write Leveling | β | Yes |
| Asynchronous Reset | β | Yes |