H5ANAG4NBJR-UHC vs H5ANAG4NBJR-RDC Comparison

Detailed side-by-side comparison of H5ANAG4NBJR-UHC by SK hynix and H5ANAG4NBJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG4NBJR-RDC H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC ✓ Active

Specification Comparison

Parameter H5ANAG4NBJR-UHC H5ANAG4NBJR-RDC
Brand SK hynix SK hynix
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.09 $5.75
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 16 Gb (2 GB)
Organization 256M x16 4G x 4
Supply Voltage (VDD) 1.14 V to 1.26 V (nominal 1.2 V) —
Clock / Data Rate 1.6 GHz —
Package FBGA-96 (PBGA96) 78-ball FBGA
Operating Temperature -40C to +95C —
Interface CMOS, DDR4 (double data rate) SSTL-12
Data Mask (DM) Yes —
Asynchronous Reset Yes —
On-Die Termination (ODT) Dynamic ODT —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Auto Self-Refresh Yes —
Mounting Type Surface Mount (BGA) Surface Mount
RoHS Status Compliant Compliant (lead-free / halogen-free per RDC suffix)
CAS Latency [DATA_NEEDED: CAS Latency / speed bin detail] —
Supply Voltage VDD — 1.2 V
Data Rate — 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet])
Prefetch — 16n (bank group architecture)
Features — Bank groups, CA parity, data CRC, ODT, DLL-off mode
Refresh — Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option]
Operating Temperature (case) — -40C to +85C (industrial; extended to 95C per datasheet conditions)
Temperature Grade Suffix — RDC - industrial temperature, lead-free, halogen-free
VDDQ — 1.2 V
Product Family — SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series

Datasheets & Resources

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