H5ANAG4NBJR-UHC vs H5ANAG4NBJR-RDC 对比

详细并排对比 H5ANAG4NBJR-UHC 出自 SK hynix 和 H5ANAG4NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG4NBJR-UHC H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix

H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix

H5ANAG4NBJR-UHC ✓ 量产中
SK hynix
H5ANAG4NBJR-RDC H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC ✓ 量产中

规格对比

参数 H5ANAG4NBJR-UHC H5ANAG4NBJR-RDC
品牌 SK hynix SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $8.09 $5.75
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 16 Gb (2 GB)
存储组织 256M x16 4G x 4
Supply Voltage (VDD) 1.14 V to 1.26 V (nominal 1.2 V) —
Clock / Data Rate 1.6 GHz —
封装 FBGA-96 (PBGA96) 78-ball FBGA
工作温度 -40C to +95C —
接口 CMOS, DDR4 (double data rate) SSTL-12
Data Mask (DM) Yes —
Asynchronous Reset Yes —
On-Die Termination (ODT) Dynamic ODT —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Auto Self-Refresh Yes —
安装类型 Surface Mount (BGA) Surface Mount
RoHS 状态 Compliant Compliant (lead-free / halogen-free per RDC suffix)
CAS 延迟 [DATA_NEEDED: CAS Latency / speed bin detail] —
Supply Voltage VDD — 1.2 V
数据速率 — 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet])
Prefetch — 16n (bank group architecture)
特性 — Bank groups, CA parity, data CRC, ODT, DLL-off mode
Refresh — Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option]
Operating Temperature (case) — -40C to +85C (industrial; extended to 95C per datasheet conditions)
Temperature Grade Suffix — RDC - industrial temperature, lead-free, halogen-free
VDDQ — 1.2 V
Product Family — SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series

数据手册与资源

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