H5ANAG6NAMR-UHC vs H5ANAG6NCMR-XNI Comparison

Detailed side-by-side comparison of H5ANAG6NAMR-UHC by SK hynix and H5ANAG6NCMR-XNI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG6NCMR-XNI H5ANAG6NCMR-XNI - DDR4 16Gb 3200Mbps DRAM | SK Hynix

H5ANAG6NCMR-XNI - DDR4 16Gb 3200Mbps DRAM | SK Hynix

H5ANAG6NCMR-XNI ✓ Active

Specification Comparison

Parameter H5ANAG6NAMR-UHC H5ANAG6NCMR-XNI
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.50 $4.95
Memory Type DDR4 SDRAM DDR4 SDRAM (volatile DRAM)
Memory Density 16 Gbit (2 GB) —
Organization 1G x 16 —
Speed Grade / Data Rate DDR4-2400 (UHC bin, PC4-19200) —
Supply Voltage (VDD) 1.2 V —
Architecture CMOS DDR4 with bank groups —
Power Class Normal Power Normal Power
Package FBGA-96 (PBGA96) FBGA-96
Mounting Type Surface Mount (BGA solder ball) Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
Refresh Self-refresh and auto-refresh (DDR4 standard 64 ms) —
CAS Latency [DATA_NEEDED: CL for UHC bin] —
Interface Type Parallel, synchronous, double data rate —
Available Speed Bins (family) PB / RD / TF / UH / VK —
Application Class Main memory, embedded, industrial —
RoHS Status [DATA_NEEDED: RoHS status] —
Lifecycle Status Active production —
Memory Size — 16 Gb
Memory Organization — 1G x 16
Data Rate — 3200 Mbps (DDR4-3200, XN speed bin)
Supply Voltage — 1.2 V
Technology — CMOS Double Data Rate IV Synchronous DRAM
Interface — Parallel (DDR4)
Product Status — Active
Application Domain — Main memory, industrial controllers, computing modules, consumer electronics
Memory Format — DRAM
Speed Bin Family — UH/VK/WM/XN
VPP Supply Voltage — [DATA_NEEDED: VPP Supply Voltage]
MSL Level — [DATA_NEEDED: MSL Level]

Datasheets & Resources

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