H5TC4G63AFR-PBA vs K4B4G1646F-BYK0 Comparison
Detailed side-by-side comparison of H5TC4G63AFR-PBA by SK hynix and K4B4G1646F-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5TC4G63AFR-PBA | K4B4G1646F-BYK0 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.98 | $1.80 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organization | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Data Rate | 1866 Mbps (PC3L-14900) | 1866 Mbps |
| Package | 96-ball FBGA | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | 8 and 4 |
| CAS Latency (CL) | 11, 12, 13 | — |
| Operating Temperature Range | 0°C to +95°C (Tcase) | — |
| Interface | 16-bit I/O | Parallel |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Memory Size | — | 4 Gb |
| Memory Organization | — | 256M x 16 |
| Supply Voltage | — | 1.35V / 1.5V |
| Clock Frequency | — | 933 MHz |
| Operating Temperature | — | 0°C to 95°C (TC) |
| CAS Latency | — | Programmable |
| On-Die Termination | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |