H5TC4G63MFR-PBA vs H5TC4G63AFR-PBI Comparison
Detailed side-by-side comparison of H5TC4G63MFR-PBA by SK hynix and H5TC4G63AFR-PBI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5TC4G63MFR-PBA | H5TC4G63AFR-PBI |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| Data Rate | 1866 Mbps (PC3L-14900) | DDR3-1600 (PC3L-12800) |
| Package | 96-ball FBGA | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) |
| Number of Banks | 8 | 8 |
| Burst Length | BL8, BL4 (with burst chop) | 8 (BL8) |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Total Memory Size | — | 4 Gb |
| Supply Voltage | — | 1.35 V |
| CAS Latency | — | Programmable |
| Refresh Period | — | 7.8 us at 85°C |
| Operating Temperature Range | — | -40°C to +95°C |
| Mounting Type | — | Surface Mount |
| Number of Terminals | — | 96 |
| RoHS Status | — | Compliant |