IAUA120N04S5N014AUMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of IAUA120N04S5N014AUMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUA120N04S5N014AUMA1
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΞ© Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUA120N04S5N014AUMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA120N04S5N014AUMA1 | β |
| Series | OptiMOSβ’ 5 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | β |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25Β°C | 120 A | β |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | 1.4 mΞ© | β |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25Β°C | 136 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C [DATA_NEEDED: confirmed min/max from datasheet] | -55C to +175C |
| Package | PG-HSOF-5-2 (sTOLL) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 5 + Tab (6 effective) | β |
| Gate Drive | Enhancement Mode | β |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant (Green Product) |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL1 (260C peak reflow) |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Product Family | β | OptiMOS-5 40 V |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% |