IAUA120N04S5N014AUMA1 vs IPC100N04S5L1R5ATMA1 Vergleich
Detaillierter Direktvergleich von IAUA120N04S5N014AUMA1 von Infineon und IPC100N04S5L1R5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUA120N04S5N014AUMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,18 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA120N04S5N014AUMA1 | — |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | 1.4 mΩ | — |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | 136 W | — |
| Betriebstemperaturbereich | -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] | -55C to +175C |
| Gehäuse | PG-HSOF-5-2 (sTOLL) | PG-TDSON-8-34 (SS08 leadless) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 5 + Tab (6 effective) | — |
| Gate Drive | Enhancement Mode | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS-Status | Compliant | Compliant (Green Product) |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL1 (260C peak reflow) |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |