IAUA120N04S5N014AUMA1 vs IPC100N04S5L1R5ATMA1 Comparación
Comparación detallada lado a lado de IAUA120N04S5N014AUMA1 por Infineon y IPC100N04S5L1R5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 ✓ ActivoInfineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUA120N04S5N014AUMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,18 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA120N04S5N014AUMA1 | — |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | 1.4 mΩ | — |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | 136 W | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] | -55C to +175C |
| Encapsulado | PG-HSOF-5-2 (sTOLL) | PG-TDSON-8-34 (SS08 leadless) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 5 + Tab (6 effective) | — |
| Gate Drive | Enhancement Mode | — |
| Automotive Qualification | AEC-Q101 | — |
| Estado RoHS | Compliant | Compliant (Green Product) |
| Nivel MSL | [DATA_NEEDED: MSL rating] | MSL1 (260C peak reflow) |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |