IAUA180N04S5N012AUMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUA180N04S5N012AUMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUA180N04S5N012AUMA1
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUA180N04S5N012AUMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.96 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA180N04S5N012AUMA1 | β |
| Series | OptiMOS-5 40 V | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 180 A (Tc) | β |
| Maximum Power Dissipation (PD) | 125 W (Tc) | β |
| R_DS(on) (max) | 1.2 mΞ© at 10 V VGS | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Package | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mmΒ² | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | β |
| Technology | OptiMOS-5 Trench | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| RoHS Status | Compliant | Compliant |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |