IAUA210N10S5N024AUMA1 vs IAUC120N06S5L015ATMA1 Comparison
Detailed side-by-side comparison of IAUA210N10S5N024AUMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUA210N10S5N024AUMA1
IAUA210N10S5N024AUMA1 - 100V 2.4mΞ© 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 β ActiveInfineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUA210N10S5N024AUMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| Technology | MOSFET (Metal Oxide), N-Channel | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) @ Tj | 210 A | β |
| Continuous Drain Current (ID) @ TC=25Β°C | [DATA_NEEDED: ID at TC=25Β°C] | β |
| On-Resistance RDS(on) Max @ VGS=10V | 2.4 mΞ© | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th) value] | β |
| Gate Charge Qg (typ) | [DATA_NEEDED: Qg typ @ VGS=10V] | β |
| Power Dissipation (PD) @ TC=25Β°C | 238 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55C to +175C (Tj) |
| Package | PG-HSOF-5-4 (7Γ8 mmΒ² sTOLL) | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount (exposed pad) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Avalanche Energy Rated | Yes (per datasheet) | β |
| Continuous Drain Current (ID, Tc=25C) | β | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | β | 1.5 mΞ© |
| Gate Charge (Qg, typ) | β | 88 nC |
| Power Dissipation (PD, Tc=25C) | β | 167 W |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Drain-Source On-State Resistance Test Conditions | β | VGS = 10 V, ID = 50 A |
| Typical Application | β | Automotive DC-DC, battery switches, motor drives |