IAUA210N10S5N024AUMA1 vs IAUC120N06S5L015ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUA210N10S5N024AUMA1 par Infineon et IAUC120N06S5L015ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ ActifInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUA210N10S5N024AUMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,65 | $0,92 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Technology | MOSFET (Metal Oxide), N-Channel | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) @ Tj | 210 A | — |
| Continuous Drain Current (ID) @ TC=25°C | [DATA_NEEDED: ID at TC=25°C] | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th) value] | — |
| Gate Charge Qg (typ) | [DATA_NEEDED: Qg typ @ VGS=10V] | — |
| Power Dissipation (PD) @ TC=25°C | 238 W | — |
| Plage de température de fonctionnement | -55°C to +175°C (TJ) | -55C to +175C (Tj) |
| Boîtier | PG-HSOF-5-4 (7×8 mm² sTOLL) | PG-TDSON-8-43 (Surface Mount) |
| Type de montage | Surface Mount | Surface Mount (exposed pad) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |