IAUA220N08S5N021AUMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IAUA220N08S5N021AUMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUA220N08S5N021AUMA1
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IAUA220N08S5N021AUMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.45 | $0.82 |
| Technology | OptiMOS-5 (75V-120V family) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (V_DS max) | 80 V | β |
| Continuous Drain Current (I_D, Tj) | 220 A | β |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΞ© at 10 V V_GS | β |
| Power Dissipation (P_D, Tc) | 211 W | β |
| Gate-Source Voltage (V_GS max) | [DATA_NEEDED: V_GS max absolute rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | β |
| Operating Temperature Range | -55C to +175C (Tj) | β |
| Package | PG-HSOF-5-4 (7x8 mmΒ²) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | β |
| RoHS Status | Compliant | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at V_GS=10V] | β |
| Output Capacitance (C_oss) | [DATA_NEEDED: C_oss typical] | β |
| Thermal Resistance (R_thJC) | [DATA_NEEDED: junction-to-case thermal resistance] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |