IAUA220N08S5N021AUMA1 vs BSC076N04NDATMA1 Сравнение
Подробное сравнение бок о бок IAUA220N08S5N021AUMA1 от Infineon и BSC076N04NDATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUA220N08S5N021AUMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,45 | $0,82 |
| Technology | OptiMOS-5 (75V-120V family) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tj) | 220 A | — |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΩ at 10 V V_GS | — |
| Power Dissipation (P_D, Tc) | 211 W | — |
| Gate-Source Voltage (V_GS max) | [DATA_NEEDED: V_GS max absolute rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | — |
| Диапазон рабочих температур | -55C to +175C (Tj) | — |
| Корпус | PG-HSOF-5-4 (7x8 mm²) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Уровень MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Статус RoHS | Compliant | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at V_GS=10V] | — |
| Output Capacitance (C_oss) | [DATA_NEEDED: C_oss typical] | — |
| Thermal Resistance (R_thJC) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Рабочая температура перехода | — | -55 C to +175 C |
| Корпус / Типоразмер | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |