IAUA220N08S5N021AUMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of IAUA220N08S5N021AUMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUA220N08S5N021AUMA1
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUA220N08S5N021AUMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.45 | $1.18 |
| Technology | OptiMOS-5 (75V-120V family) | β |
| Drain-Source Voltage (V_DS max) | 80 V | β |
| Continuous Drain Current (I_D, Tj) | 220 A | β |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΞ© at 10 V V_GS | β |
| Power Dissipation (P_D, Tc) | 211 W | β |
| Gate-Source Voltage (V_GS max) | [DATA_NEEDED: V_GS max absolute rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | β |
| Operating Temperature Range | -55C to +175C (Tj) | -55C to +175C |
| Package | PG-HSOF-5-4 (7x8 mmΒ²) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | MSL1 (260C peak reflow) |
| RoHS Status | Compliant | Compliant (Green Product) |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at V_GS=10V] | β |
| Output Capacitance (C_oss) | [DATA_NEEDED: C_oss typical] | β |
| Thermal Resistance (R_thJC) | [DATA_NEEDED: junction-to-case thermal resistance] | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-5 40 V |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% |