IAUA220N08S5N021AUMA1 vs IPC100N04S5L1R5ATMA1 Сравнение
Подробное сравнение бок о бок IAUA220N08S5N021AUMA1 от Infineon и IPC100N04S5L1R5ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 ✓ АктивенInfineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUA220N08S5N021AUMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,45 | $1,18 |
| Technology | OptiMOS-5 (75V-120V family) | — |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tj) | 220 A | — |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΩ at 10 V V_GS | — |
| Power Dissipation (P_D, Tc) | 211 W | — |
| Gate-Source Voltage (V_GS max) | [DATA_NEEDED: V_GS max absolute rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | — |
| Диапазон рабочих температур | -55C to +175C (Tj) | -55C to +175C |
| Корпус | PG-HSOF-5-4 (7x8 mm²) | PG-TDSON-8-34 (SS08 leadless) |
| Тип монтажа | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Уровень MSL | [DATA_NEEDED: MSL moisture sensitivity level] | MSL1 (260C peak reflow) |
| Статус RoHS | Compliant | Compliant (Green Product) |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at V_GS=10V] | — |
| Output Capacitance (C_oss) | [DATA_NEEDED: C_oss typical] | — |
| Thermal Resistance (R_thJC) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |