IAUC100N04S6N022ATMA1 vs IAUC120N04S6N010ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6N022ATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 β ActiveInfineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6N022ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.68 |
| Technology | OptiMOS 6, N-Channel MOSFET | OptiMOS 6 |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 100 A | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | β |
| Package | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-34 (5x6 mm leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) |
| Polarity | N-Channel enhancement mode | Single N-channel |
| Automotive Qualification | AEC-Q100 (IAUC family) | AEC-Q101 |
| Pin Count | 8 | β |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | β | 40 V |
| Continuous Drain Current (Id, Tc) | β | 150 A |
| Power Dissipation (Pd, Tc) | β | 150 W |
| RDS(on) at VGS=10V (typ) | β | 1.0 mΞ© |
| RDS(on) at VGS=10V (max per LCSC excerpt) | β | 1.03 mΞ© |
| Gate-Source Threshold (VGS(th), typ) | β | 3 V (at 90 Β΅A) |
| Gate Drive Recommendation | β | 10 V VGS for full RDS(on) spec |