IAUC100N04S6N022ATMA1 vs IAUC120N04S6N010ATMA1 对比
详细并排对比 IAUC100N04S6N022ATMA1 出自 Infineon 和 IAUC120N04S6N010ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUC100N04S6N022ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $0.68 |
| Technology | OptiMOS 6, N-Channel MOSFET | OptiMOS 6 |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | — |
| 封装 | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-34 (5x6 mm leadless) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (junction) | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Polarity | N-Channel enhancement mode | Single N-channel |
| Automotive Qualification | AEC-Q100 (IAUC family) | AEC-Q101 |
| 引脚数量 | 8 | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |