IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
MPN: IAUC120N04S6N010ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.5764 | $1.58 |
| 10 | $1.42 | $14.20 |
| 100 | $1.18 | $118.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.81 | $810.00 |
| 5,000 | $0.68 | $3,400.00 |
Drop-in alternatives for IAUC120N04S6N010ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IAUC120N04S6N010ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 40 V |
| Continuous Drain Current (Id, Tc) | 150 A |
| Power Dissipation (Pd, Tc) | 150 W |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) |
| Technology | OptiMOS 6 |
| Package | PG-TDSON-8-34 (5x6 mm leadless) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Operating Temperature Range | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| RoHS Status | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec |
| Polarity | Single N-channel |
IAUC120N04S6N010ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection |
| Pin 5 | Source / NC — Source or no-connect (verify per lot) |
| Pin 6 | Source / NC — Source or no-connect (verify per lot) |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
Safe Operating Area (DC)
Typical Applications
IAUC120N04S6N010ATMA1 is suitable for 6 applications: Automotive 12V/24V BLDC Motor Drive, Electronic Power Steering (EPS) High-Side Switch, 48V Mild-Hybrid DC-DC Buck Stage (with voltage derating), Industrial High-Current Load Switch / Hot-Swap, Body Electronics Load Switch (Lighting, Heaters), Synchronous Rectifier for Point-of-Load (POL) Converters.
Automotive 12V/24V BLDC Motor Drive
The IAUC120N04S6N010ATMA1 is well suited to three-phase brushless DC motor inverter stages in 12 V and 24 V automotive systems such as water pumps, oil pumps, HVAC blowers, and electric fans. Its 1.0 mΩ typical RDS(on) at 10 V VGS minimises conduction loss in the high-side and low-side synchronous-rectifier positions, while the 150 A continuous Tc rating provides generous thermal margin for the repetitive peak currents of trapezoidal or FOC commutation. AEC-Q101 qualification makes it directly acceptable for under-the-hood deployment. Used as the low-side FET, it typically dissipates 5-10 W at 50 A RMS, easily handled by the exposed thermal pad with 1 sq. cm of copper. Compared with a 60 V/80 V part of the same footprint, this 40 V device trades headroom for ~20% lower RDS(on), which directly extends efficiency and battery-run time in stop-start vehicles.
Recommended
Electronic Power Steering (EPS) High-Side Switch
In EPS racks, the IAUC120N04S6N010ATMA1 can serve as the high-side disconnect or reverse-battery protection switch on the 12 V bus feeding the steering-assist motor. Its 1.0 mΩ RDS(on) keeps continuous voltage drop below 50 mV at 50 A, preserving torque accuracy and avoiding nuisance diagnostic fault codes. The 40 V V(BR)DSS handles load-dump transients up to 35 V when paired with a TVS clamp. AEC-Q101 qualification satisfies functional-safety documentation. PCB thermal pad of at least 25x25 mm copper keeps RthJA below 35 °C/W, supporting continuous 80 A operation at TA=85 °C. Compared with mechanical relays, this solid-state switch offers silent operation, longer life, and faster fault response in safety-critical EPS loops.
Recommended
48V Mild-Hybrid DC-DC Buck Stage (with voltage derating)
For 48 V mild-hybrid powertrain DC-DC converters stepping down to 12 V, the IAUC120N04S6N010ATMA1 must be derated to 80% of its 40 V rating, leaving ~32 V working voltage — typically marginal. It is best used only on the 12 V low-voltage side of the converter where it shines. Here, switching at 100-200 kHz with 50 A RMS, the 1.0 mΩ RDS(on) keeps synchronous-rectifier conduction loss below 3 W per switch, supporting >97% converter efficiency. The OptiMOS 6 figure-of-merit improvement over OptiMOS 5 directly cuts switching loss, easing the thermal budget of the 12 V stage. Compared with the previous-generation IAUC120N04S6N009ATMA1, this part reduces total stage loss by ~20%.
Recommended
Industrial High-Current Load Switch / Hot-Swap
The IAUC120N04S6N010ATMA1 fits 24 V industrial load-disconnect and hot-swap circuits where a low-RDS(on) N-channel FET is needed to limit inrush and provide reverse-polarity protection. Its 1.0 mΩ RDS(on) at 10 V VGS means a 100 A load sees only 100 mV drop, minimising steady-state dissipation. The 150 A continuous Tc rating handles brief startup surges of 300+ A that would trip slower protection circuits. The exposed thermal pad allows direct PCB heatsinking into inner-layer copper planes. Compared with a standard DPAK MOSFET at the same current, this PG-TDSON-8-34 part achieves ~40% lower RDS(on) in the same board area, enabling smaller, cooler designs.
Recommended
Body Electronics Load Switch (Lighting, Heaters)
For automotive body-control modules driving high-current loads such as headlights, seat heaters, and heated mirrors, the IAUC120N04S6N010ATMA1 provides a robust AEC-Q101 qualified switching element. Its 1.0 mΩ RDS(on) minimises steady-state loss at the 10-30 A loads typical of these subsystems, reducing PCB temperature rise and improving fuel economy by easing alternator load. The 40 V rating easily survives 24 V jump-start and load-dump events. Compared with smart high-side switches, this discrete MOSFET offers lower RDS(on) at lower cost when the application does not require integrated diagnostics — a common trade-off in cost-sensitive body modules.
Recommended
Synchronous Rectifier for Point-of-Load (POL) Converters
The IAUC120N04S6N010ATMA1 works as the synchronous-rectifier low-side FET in 12 V-input, 30-100 A buck converters for telecom and server point-of-load rails. Its 1.0 mΩ RDS(on) and OptiMOS 6 low Qg reduce both conduction and switching loss at 300-500 kHz switching frequencies, supporting >95% efficiency at full load. The PG-TDSON-8-34 footprint keeps the converter compact while the exposed pad enables direct PCB heatsinking into inner copper planes. Compared with OptiMOS 5 generation parts, this OptiMOS 6 device reduces figure-of-merit by ~30%, allowing either higher switching frequency (smaller magnetics) or higher output current (more power) from the same board.
Recommended
Recommended Products Summary
Engineering reference data for IAUC120N04S6N010ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC120N04S6N009ATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7N019GATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same | PG-TDSON-8-34 (5x6 mm) - same |
| V(BR)DSS | 40 V | 40 V | 40 V | 40 V | 40 V | 80 V |
| RDS(on) typ at 10V | 1.0 mΩ | ~1.3 mΩ | 1.5 mΩ | 4.2 mΩ | 1.9 mΩ | [DATA_NEEDED] |
| Continuous Id (Tc) | 150 A | 120 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 151 A |
| Technology Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 |
| Automotive Qualified | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Unit Price (approx) | $1.58 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest RDS(on) in the Infineon 40 V 5x6 mm family (vs IAUC120N04S6N009ATMA1)
- Better figure-of-merit than newer OptiMOS 7 siblings (vs IAUCN04S7N015GATMA1)
- 40 V rating is tighter and lower-loss than 80 V upgrade (vs ISC151N08NM6ATMA1)
Design Notes
Estimated: at 50 A continuous load with 1.0 mΩ RDS(on), conduction loss is roughly P = I² × R = 50² × 0.001 = 2.5 W per MOSFET. Two FETs in a half-bridge at this load dissipate ~5 W total, easily handled by the PG-TDSON-8-34 thermal pad with 25x25 mm of 2 oz copper. For continuous 100 A operation, increase the copper pour to at least 50x50 mm or attach an external heatsink to keep junction below 150 °C. Always consult the datasheet SOA curves before pushing beyond rated current.
Keep the gate-drive loop (gate pin to gate-driver ground return) as small as physically possible — ideally under 10 mm total path length. Place a 10-100 Ω gate resistor close to the gate pin to dampen parasitic ringing caused by the gate-source capacitance and PCB trace inductance. Route high-current source and drain paths on wide copper pours directly into the thermal pad. Use multiple vias in the thermal pad (typically 0.3 mm drill, 0.6 mm pitch) to conduct heat into inner copper planes.
Driving VGS below 8 V significantly increases RDS(on) — for example, at 6 V VGS the RDS(on) may rise 50-100%, doubling conduction loss. Always use a gate driver that swings to at least 10 V. Also verify that the source current path does not share impedance with the gate-driver ground return, or the Miller current will create VGS bounce that can falsely turn the FET partially on during switching transients.
Compliance Information
AEC-Q101 (automotive MOSFET grade) per Infineon OptiMOS 6 family. RoHS and REACH compliant per Infineon product page. Lead-free reflow compatible per MSL1 JEDEC J-STD-020.
