IAUC100N08S5N043ATMA1 vs IAUC90N10S5N062ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N08S5N043ATMA1 by Infineon and IAUC90N10S5N062ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 βœ“ Active
Infineon
IAUC90N10S5N062ATMA1 IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N08S5N043ATMA1 IAUC90N10S5N062ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.72 $0.95
Manufacturer Infineon Technologies Infineon Technologies
Part Series IAUC / OptiMOS 5 β€”
Transistor Type N-Channel MOSFET (Enhancement Mode) β€”
Maximum Drain-Source Voltage (V<sub>DS</sub>) 80 V β€”
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) 100 A (package limited) β€”
Continuous Drain Current (chip-limited) 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W β€”
Maximum R<sub>DS(on)</sub> 4.3 mΞ© β€”
Maximum Power Dissipation (P<sub>D</sub>) 125 W (T<sub>C</sub>) β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package PG-TDSON-8-34 (SuperSO8) PG-TDSON-8-34 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Moisture Sensitivity Level (MSL) MSL1 (up to 260Β°C peak reflow) β€”
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Avalanche Rating 100% Avalanche Tested β€”
RoHS / REACH RoHS Compliant (Green Product) β€”
Technology OptiMOS 5 (Trench) Trench MOSFET (OptiMOS 5, Generation 5)
Channel Mode Enhancement β€”
Product Family β€” OptiMOS 5
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at Tc=25C β€” 90 A
Maximum On-Resistance RDS(on) max at VGS=10V β€” 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ β€” 3.8 V
Maximum Power Dissipation (Tc=25C) β€” 115 W
Operating Junction Temperature β€” -55 C to +175 C
Avalanche Rated β€” Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) β€” MSL1 (260 C peak reflow)
RoHS / Green Product β€” Yes (RoHS compliant, Green Product)
Lead-Free β€” Yes

Datasheets & Resources

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