IAUC100N08S5N043ATMA1 vs IAUC90N10S5N062ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N08S5N043ATMA1 sa pamamagitan ng Infineon at IAUC90N10S5N062ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 ✓ Nakahanda
Infineon
IAUC90N10S5N062ATMA1 IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC100N08S5N043ATMA1 IAUC90N10S5N062ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Series IAUC / OptiMOS 5 —
Uri ng Transistor N-Channel MOSFET (Enhancement Mode) —
Maximum Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 100 A (package limited) —
Continuous Drain Current (chip-limited) 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W —
Maximum R<sub>DS(on)</sub> 4.3 mΩ —
Maximum Power Dissipation (P<sub>D</sub>) 125 W (T<sub>C</sub>) —
Hanay ng Temperature na Operasyon -55°C to +175°C —
Packhaging PG-TDSON-8-34 (SuperSO8) PG-TDSON-8-34 (TDSON-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 8 —
Level ng Sensitivity sa Asid ng Moisture (MSL) MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Avalanche Rating 100% Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Technology OptiMOS 5 (Trench) Trench MOSFET (OptiMOS 5, Generation 5)
Channel Mode Enhancement —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25C — 90 A
Maximum On-Resistance RDS(on) max at VGS=10V — 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ — 3.8 V
Maximum Power Dissipation (Tc=25C) — 115 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Avalanche Rated — Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) — MSL1 (260 C peak reflow)
RoHS / Green Product — Yes (RoHS compliant, Green Product)
Lead-Free — Yes

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita