IAUC120N04S6L009ATMA1 vs IAUC120N04S6L005ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6L009ATMA1 by Infineon and IAUC120N04S6L005ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΞ© 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 β ActiveInfineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΞ© N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6L009ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 150 A (per datasheet header) | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100Β°C) | [DATA_NEEDED: I_D at TC=100C] | β |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed I_DM] | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΞ© | β |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: VGS(th) typ/range] | β |
| Gate Charge Q<sub>g</sub> | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25Β°C) | 150 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-34 (5x6 mm leadless, SS08) | PG-TDSON-8-53 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| AEC-Q101 Automotive Qualification | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Avalanche Energy E<sub>AS</sub> | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Part Number | β | IAUC120N04S6L005ATMA1 |
| Technology | β | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 120 A (Tj) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25Β°C) | β | 187 W |
| RDS(on) max at VGS=10 V | β | 0.55 mΞ© at 60 A |
| RDS(on) max at VGS=4.5 V | β | 0.85 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±16 V |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Total Gate Charge (Qg) | β | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | β | 11.203 nF at 25 V |
| Output Capacitance (Coss) | β | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | β | 175 pF |
| Automotive Qualification | β | AEC-Q101 qualified |