IAUC120N04S6L009ATMA1 vs IAUC120N04S6L005ATMA1 Comparação
Comparação detalhada lado a lado de IAUC120N04S6L009ATMA1 por Infineon e IAUC120N04S6L005ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 ✓ AtivoInfineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUC120N04S6L009ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,65 | $0,92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 150 A (per datasheet header) | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed I_DM] | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: VGS(th) typ/range] | — |
| Gate Charge Q<sub>g</sub> | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | 150 W | — |
| Temperatura de junção de operação | -55 °C to +175 °C | -55 °C to +175 °C |
| Encapsulamento | PG-TDSON-8-34 (5x6 mm leadless, SS08) | PG-TDSON-8-53 (5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 8 | — |
| AEC-Q101 Automotive Qualification | Yes | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | [DATA_NEEDED: MSL rating] | — |
| Avalanche Energy E<sub>AS</sub> | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Part Number | — | IAUC120N04S6L005ATMA1 |
| Technology | — | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A (Tj) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25°C) | — | 187 W |
| RDS(on) max at VGS=10 V | — | 0.55 mΩ at 60 A |
| RDS(on) max at VGS=4.5 V | — | 0.85 mΩ |
| Gate-Source Voltage (VGS) | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Total Gate Charge (Qg) | — | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | — | 11.203 nF at 25 V |
| Output Capacitance (Coss) | — | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | — | 175 pF |
| Automotive Qualification | — | AEC-Q101 qualified |