IAUC120N04S6L009ATMA1 vs IAUC120N04S6L005ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N04S6L009ATMA1 disebabkan oleh Infineon dan IAUC120N04S6L005ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 ✓ AktifInfineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC120N04S6L009ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 150 A (per datasheet header) | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed I_DM] | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: VGS(th) typ/range] | — |
| Gate Charge Q<sub>g</sub> | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | 150 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | -55 °C to +175 °C |
| Kemasan | PG-TDSON-8-34 (5x6 mm leadless, SS08) | PG-TDSON-8-53 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| AEC-Q101 Automotive Qualification | Yes | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Avalanche Energy E<sub>AS</sub> | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Part Number | — | IAUC120N04S6L005ATMA1 |
| Technology | — | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A (Tj) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25°C) | — | 187 W |
| RDS(on) max at VGS=10 V | — | 0.55 mΩ at 60 A |
| RDS(on) max at VGS=4.5 V | — | 0.85 mΩ |
| Gate-Source Voltage (VGS) | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Total Gate Charge (Qg) | — | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | — | 11.203 nF at 25 V |
| Output Capacitance (Coss) | — | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | — | 175 pF |
| Automotive Qualification | — | AEC-Q101 qualified |