IAUC120N04S6L009ATMA1 vs IAUC60N04S6L039ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6L009ATMA1 by Infineon and IAUC60N04S6L039ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 ✓ Active
Specification Comparison
| Parameter | IAUC120N04S6L009ATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-6 40V | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 150 A (per datasheet header) | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed I_DM] | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: VGS(th) typ/range] | — |
| Gate Charge Q<sub>g</sub> | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | 150 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | -55C to +175C |
| Package | PG-TDSON-8-34 (5x6 mm leadless, SS08) | PG-TDSON-8 (SSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | — |
| AEC-Q101 Automotive Qualification | Yes | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Avalanche Energy E<sub>AS</sub> | [DATA_NEEDED: single-pulse avalanche energy] | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 6 (trench) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rated | — | Yes (100% avalanche tested) |