IAUC120N04S6L009ATMA1 vs IAUC60N04S6L039ATMA1 비교
다음의 상세 나란히 비교: IAUC120N04S6L009ATMA1 제조: Infineon 및 IAUC60N04S6L039ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 ✓ 활성
사양 비교
| 파라미터 | IAUC120N04S6L009ATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.65 | $0.72 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-6 40V | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 150 A (per datasheet header) | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed I_DM] | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: VGS(th) typ/range] | — |
| Gate Charge Q<sub>g</sub> | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | 150 W | — |
| 동작 접합 온도 | -55 °C to +175 °C | -55C to +175C |
| 패키지 | PG-TDSON-8-34 (5x6 mm leadless, SS08) | PG-TDSON-8 (SSO8) 5x6 mm |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 8 | — |
| AEC-Q101 Automotive Qualification | Yes | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Avalanche Energy E<sub>AS</sub> | [DATA_NEEDED: single-pulse avalanche energy] | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 6 (trench) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rated | — | Yes (100% avalanche tested) |