IAUC120N04S6L009ATMA1 vs IAUC60N04S6L039ATMA1 比較

詳細並排比較 IAUC120N04S6L009ATMA1 由 Infineon 與 IAUC60N04S6L039ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC120N04S6L009ATMA1 IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon

IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon

IAUC120N04S6L009ATMA1 ✓ 啟用中
Infineon
IAUC60N04S6L039ATMA1 IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 ✓ 啟用中

規格比較

參數 IAUC120N04S6L009ATMA1 IAUC60N04S6L039ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family OptiMOS-6 40V —
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 150 A (per datasheet header) —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) [DATA_NEEDED: I_D at TC=100C] —
Pulsed Drain Current (I<sub>DM</sub>) [DATA_NEEDED: pulsed I_DM] —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V 0.9 mΩ —
R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: VGS(th) typ/range] —
Gate Charge Q<sub>g</sub> [DATA_NEEDED: total gate charge] —
Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) 150 W —
工作接面溫度 -55 °C to +175 °C -55C to +175C
封裝 PG-TDSON-8-34 (5x6 mm leadless, SS08) PG-TDSON-8 (SSO8) 5x6 mm
安裝類型 Surface Mount Surface Mount
腳位數 8 —
AEC-Q101 Automotive Qualification Yes —
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Avalanche Energy E<sub>AS</sub> [DATA_NEEDED: single-pulse avalanche energy] —
FET Type — N-Channel
Technology — OptiMOS 6 (trench)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25C) — 60 A
Pulsed Drain Current (I_DM) — 240 A
R_DS(on) max @ V_GS=10V — 3.9 milliohm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Power Dissipation (P_D) — 42 W
Automotive Qualification — AEC-Q101 qualified
Avalanche Rated — Yes (100% avalanche tested)

資料表與資源

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