IAUC120N06S5N011ATMA1 vs IAUC120N06S5L015ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N011ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveInfineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N011ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) | 120 A (Tc=25Β°C, Vgs=10V) | β |
| Pulsed Drain Current (Idm) | 310 A (Tj) | β |
| On-Resistance Rds(on) max | 1.1 mΞ© at Vgs=10 V | β |
| Gate-Source Voltage (Vgs) max | Β±20 V | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | β |
| Power Dissipation (Pd) | 188 W (Tc=25Β°C) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (Tj) | -55C to +175C (Tj) |
| Package | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount (exposed pad) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Technology | β | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc=25C) | β | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | β | 1.5 mΞ© |
| Gate Charge (Qg, typ) | β | 88 nC |
| Power Dissipation (PD, Tc=25C) | β | 167 W |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| RoHS Status | β | Compliant |
| Drain-Source On-State Resistance Test Conditions | β | VGS = 10 V, ID = 50 A |
| Typical Application | β | Automotive DC-DC, battery switches, motor drives |