IAUC120N06S5N011ATMA1 vs IAUC120N06S5L015ATMA1 对比

详细并排对比 IAUC120N06S5N011ATMA1 出自 Infineon 和 IAUC120N06S5L015ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N06S5N011ATMA1 IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon

IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon

IAUC120N06S5N011ATMA1 ✓ 量产中
Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 量产中

规格对比

参数 IAUC120N06S5N011ATMA1 IAUC120N06S5L015ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.62 $0.92
Manufacturer Infineon Technologies —
Product Family OptiMOS-5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) 120 A (Tc=25°C, Vgs=10V) —
Pulsed Drain Current (Idm) 310 A (Tj) —
On-Resistance Rds(on) max 1.1 mΩ at Vgs=10 V —
Gate-Source Voltage (Vgs) max ±20 V —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total value] —
Power Dissipation (Pd) 188 W (Tc=25°C) —
工作温度范围 -55°C to +175°C (Tj) -55C to +175C (Tj)
封装 PG-TDSON-8-53 (SSO8 5x6 mm) PG-TDSON-8-43 (Surface Mount)
安装类型 Surface Mount Surface Mount (exposed pad)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance Compliant —
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Technology — N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Gate-Source Voltage (VGS) max — ±20 V
RoHS 状态 — Compliant
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

数据手册与资源

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