IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
MPN: IAUC120N06S5N011ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.65 | $26.50 |
| 100 | $2.3 | $230.00 |
| 500 | $1.95 | $975.00 |
| 1,000 | $1.62 | $1,620.00 |
IAUC120N06S5N011ATMA1 Overview
A power MOSFET is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals. N-channel enhancement-mode MOSFETs like this one are the workhorse of low-voltage power conversion: when Vgs exceeds the threshold, the device conducts; when Vgs is pulled low, it blocks. OptiMOS-5 represents Infineon's 5th-generation trench architecture, which lowers Rds(on) per unit silicon area, reduces gate charge (Qg), and improves body-diode ruggedness. In the broader taxonomy, this part is a discrete power MOSFET within the power semiconductor family used in DC-DC converters, motor drives, and load switches.
Key features include 1.1 mΩ typical Rds(on) at Vgs=10 V, 60 V Vdss breakdown voltage, ±20 V Vgs rating, and an integrated ESD-protected gate. The SSO8 5x6 package provides a low thermal resistance path (RthJC around 0.8 C/W typical) and is designed for top-side cooling on PCB. The part is optimized for normal-level gate drive (10 V) and supports high-frequency switching up to several hundred kHz in synchronous rectification stages. AEC-Q101 qualification plus automotive-grade reliability make it suited to under-the-hood and chassis electronics.
The IAUC120N06S5N011ATMA1 uses Infineon's advanced OptiMOS-5 trench cell design, which provides superior figure-of-merit (FOM = Rds(on) × Qg) compared to previous generations. This translates directly to lower switching losses in high-frequency DC-DC converters and reduced conduction losses in high-current paths. The robust body diode supports synchronous rectification without additional clamp protection in most topologies.
Typical applications include automotive 12 V/24 V DC-DC converters (buck and synchronous rectification stages), eFuse and battery protection FETs in 12 V Li-ion systems, motor control H-bridges (BLDC, EPS), LED headlight drivers, and USB-PD high-current load switches. Its low Rds(on) minimizes I²R losses at 100 A+ continuous currents, which is critical for thermal headroom in compact automotive modules.
When designing with this MOSFET, ensure the gate driver delivers 10 V Vgs for full enhancement. Layout matters: place the source sense (Kelvin connection) close to the source pad to avoid Rds(on) inflation. Thermal management should account for the high current capability - a single 1 oz copper pour on a 4-layer FR4 board may need to be supplemented with thermal vias under the exposed pad.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing a consolidated engineering reference for IAUC120N06S5N011ATMA1 selection and procurement.
Drop-in alternatives for IAUC120N06S5N011ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
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View Datasheet →IAUC120N06S5N011ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) | 120 A (Tc=25°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | 310 A (Tj) |
| On-Resistance Rds(on) max | 1.1 mΩ at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | ±20 V |
| Power Dissipation (Pd) | 188 W (Tc=25°C) |
| Operating Temperature Range | -55°C to +175°C (Tj) |
| Package | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
IAUC120N06S5N011ATMA1 Pin Configuration
| Pin 1 | G — Gate input |
| Pin 2 | D — Drain (connected to exposed pad) |
| Pin 3 | D — Drain |
| Pin 4 | D — Drain |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | S — Source (return path) |
Safe Operating Area (TC=25°C, Vgs=10V)
Typical Applications
IAUC120N06S5N011ATMA1 is suitable for 6 applications: Automotive 12V/24V DC-DC Synchronous Rectification, Battery Protection and eFuse (12V Li-ion/LiFePO4), BLDC Motor Drive H-Bridge (EPS, eCompressors), High-Current USB-PD Load Switch, OR-ing and Power Muxing in Redundant Systems, LED Headlight Driver and Daytime Running Lamps.
Automotive 12V/24V DC-DC Synchronous Rectification
The IAUC120N06S5N011ATMA1's 1.1 mΩ typical Rds(on) and 120 A continuous drain current make it an ideal synchronous rectifier in 24 V-to-12 V and 12 V buck/boost converters for EV powertrain and chassis ECUs. The low Rds(on) directly reduces I²R conduction losses at 50-100 A load currents, where every milliohm translates to several watts of dissipation. In a typical 2 kW buck converter switching at 200-400 kHz, the synchronous FET carries the majority of the load current during the low-side phase; this part's low Qg also minimizes switching losses. The 60 V Vdss provides ample margin for 24 V bus transients including load-dump events clamped below 35-40 V. AEC-Q101 qualification and -55°C to +175°C Tj range suit under-hood placements.
Recommended
Battery Protection and eFuse (12V Li-ion/LiFePO4)
In 12 V battery packs (Li-ion or LiFePO4), the IAUC120N06S5N011ATMA1 serves as a high-side or low-side disconnect FET. The 1.1 mΩ Rds(on) keeps continuous-path losses low during normal operation, while the 310 A pulsed rating handles inrush and short-circuit events. The 60 V Vdss covers 4S LiFePO4 stacks and 3S-4S Li-ion with comfortable margin. The integrated gate ESD protection simplifies the BMS gate-driver interface, and AEC-Q101 qualification supports automotive battery management modules. In eFuse applications, the part's low Rds(on) and high current capability allow designers to consolidate multiple lower-rated FETs into a single solution, reducing PCB area and thermal design complexity.
Recommended
BLDC Motor Drive H-Bridge (EPS, eCompressors)
The IAUC120N06S5N011ATMA1 in a 3-phase or H-bridge configuration drives BLDC motors in electric power steering (EPS) and electric compressor applications. The 120 A continuous rating and 1.1 mΩ Rds(on) keep conduction losses in the inverter below 1% at typical 50-80 A phase currents, which is critical for motor efficiency and thermal envelope. The OptiMOS-5 cell design provides robust body-diode reverse recovery, supporting hard switching in motor PWM at 20-50 kHz without requiring external snubbers. The PG-TDSON-8-53 package's 188 W power dissipation rating (at Tc=25°C) gives designers substantial thermal headroom when properly heatsunk with a thermal via array.
Recommended
High-Current USB-PD Load Switch
For USB Power Delivery (USB-PD 3.1 EPR) at 28 V/36 V/48 V bus voltages and 5-20 A currents, the IAUC120N06S5N011ATMA1 acts as a high-side load switch. Its 60 V Vdss handles 28 V and 36 V nominal rails with substantial headroom, while the 1.1 mΩ Rds(on) at 10 V Vgs supports continuous 5 A paths (5 V × 1.1 mΩ = 25 mW) with negligible voltage drop. The 120 A rating allows multi-port hubs to use a single FET per port. The 5 V Vgs logic-level variant (IAUC120N06S5L011ATMA1) may be preferred for direct MCU GPIO control without a separate driver.
Recommended
OR-ing and Power Muxing in Redundant Systems
In redundant 12 V/24 V supply systems, the IAUC120N06S5N011ATMA1 is used as a low-Rds(on) OR-ing FET to combine two power sources (e.g., main + backup) with minimal forward drop. At 30 A load and 1.1 mΩ Rds(on), the OR-ing dissipation is approximately 1 W per FET - low enough to manage without active cooling. The 60 V Vdss supports 24 V nominal buses directly. AEC-Q101 qualification allows use in chassis and powernet ECUs. The fast body diode and good dv/dt ruggedness minimize switching transients during power-mux events.
Recommended
LED Headlight Driver and Daytime Running Lamps
In matrix LED headlight and daytime running lamp (DRL) drivers, the IAUC120N06S5N011ATMA1 functions as the buck-converter switching FET or high-side load switch. The 60 V rating handles 24 V commercial-vehicle electrical systems, while the 1.1 mΩ Rds(on) ensures 95%+ efficiency at 5-10 A load. The OptiMOS-5 technology reduces EMI due to the part's low Qgd, which keeps dv/dt sharp yet controlled. AEC-Q101 and wide Tj range suit engine-compartment-mounted LED driver modules.
Recommended
Recommended Products Summary
Engineering reference data for IAUC120N06S5N011ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC120N06S5L011ATMA1 | IAUC120N06S5L015ATMA1 | IAUC120N04S6N010ATMA1 | IAUC120N04S6N009ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-53 (SSO8 5x6) | PG-TDSON-8-53 (SSO8 5x6) - same | PG-TDSON-8-53 (SSO8 5x6) - same | PG-TDSON-8-53 (SSO8 5x6) - same | PG-TDSON-8-53 (SSO8 5x6) - same | PG-TDSON-8-53 (SSO8 5x6) - same |
| Drain-Source Voltage (Vdss) | 60 V | 60 V | 60 V | 40 V | 40 V | 40 V |
| Rds(on) max at 10V Vgs | 1.1 mΩ | 1.1 mΩ | 1.5 mΩ | 1.0 mΩ | 0.9 mΩ | 1.1 mΩ |
| Continuous Drain Current (Id) | 120 A | 120 A | 120 A | 120 A | 120 A | 120 A |
| Gate Drive Voltage | 10 V (normal level) | 4.5 V (logic level) | 4.5 V (logic level) | 10 V (normal level) | 10 V (normal level) | 10 V (normal level) |
| Technology Generation | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-6 | OptiMOS-6 | OptiMOS-7 |
| Automotive Grade | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
Key Differentiators
- Normal-level (10V) gate drive optimized for traditional gate drivers (vs IAUC120N06S5L011ATMA1)
- 60 V Vdss provides 24 V automotive headroom (vs IAUC120N04S6N010ATMA1 (40 V))
- Mature OptiMOS-5 platform with proven automotive reliability (vs ISC011N04NM7VATMA1 (OptiMOS-7, 40 V))
Design Notes
At 60 A continuous current through a 1.1 mΩ Rds(on) MOSFET, the conduction dissipation is P = I² × R = 60² × 0.0011 ≈ 4 W. The PG-TDSON-8-53 package has RthJC of approximately 0.8 C/W, giving a 3.2 C rise above case temperature. With PCB RthJA of approximately 40 C/W on a 1 oz 4-layer board with thermal-via array, the junction temperature rises 160 C above ambient at full continuous current. Estimated thermal margin is sufficient for sustained 60 A operation at 85 C ambient. For 100 A+ applications, place multiple thermal vias under the exposed pad and consider a copper spreader.
The PG-TDSON-8-53 (SSO8 5x6) exposes the Drain via the bottom thermal pad, which is internally bonded to pins 2-7. This consolidated drain structure minimizes source-inductance loop area. Place a Kelvin-source connection at pin 8 with a separate trace to the gate driver return, avoiding shared current paths with the high-current drain. Use 2 oz copper on the drain pours and a 4x4 array of 0.3 mm thermal vias under the exposed pad to optimize both thermal and electrical performance.
Do not exceed ±20 V on the gate (Vgs) - static discharge or gate-driver overvoltage can permanently damage the thin gate oxide. The Infineon datasheet specifies 100% Rg-tested parts, but external protection (TVS or zener clamp) is recommended in 24 V load-dump environments. Also observe SOA limits: at 60 V Vds and high Id, the part enters linear-mode operation and dissipates significant power; pulsed operation exceeding SOA can cause thermal runaway. Lastly, derate Id for Tj above 25 C - the 120 A rating is at Tc=25 C, and at Tj=175 C the maximum current is significantly lower.
Compliance Information
AEC-Q101 qualified (note: part is qualified to Q101, not Q100 - both are automotive stress-test standards with Q101 being the discrete-component variant). RoHS and lead-free confirmed by Infineon product page and distributor listings.
