IAUC120N06S5N017ATMA1 vs IAUC120N06S5L015ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N017ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N017ATMA1
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΞ© OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 β ActiveInfineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N017ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 120 A | β |
| Pulsed Drain Current (IDM) | 757 A | β |
| RDS(on) at VGS=10V | 1.7 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) | β |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC | β |
| Input Capacitance (Ciss) | 6.952 nF | β |
| Reverse Transfer Capacitance (Crss) | 84 pF | β |
| Output Capacitance (Coss) | 1.507 nF | β |
| Power Dissipation (PD, Tc=25Β°C) | 167 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55C to +175C (Tj) |
| Package | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount (exposed pad) |
| AEC-Q101 Qualification | Yes (Automotive Grade) | β |
| MSL Level | MSL1 (260Β°C peak reflow) | [DATA_NEEDED: MSL level] |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| Technology | β | N-Channel MOSFET (OptiMOS 5) |
| Continuous Drain Current (ID, Tc=25C) | β | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | β | 1.5 mΞ© |
| Gate Charge (Qg, typ) | β | 88 nC |
| Power Dissipation (PD, Tc=25C) | β | 167 W |
| Automotive Qualification | β | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| RoHS Status | β | Compliant |
| Drain-Source On-State Resistance Test Conditions | β | VGS = 10 V, ID = 50 A |
| Typical Application | β | Automotive DC-DC, battery switches, motor drives |