IAUC120N06S5N017ATMA1 vs IAUC120N06S5L015ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC120N06S5N017ATMA1 par Infineon et IAUC120N06S5L015ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ ActifInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC120N06S5N017ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,32 | $0,92 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 120 A | — |
| Pulsed Drain Current (IDM) | 757 A | — |
| RDS(on) at VGS=10V | 1.7 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC | — |
| Input Capacitance (Ciss) | 6.952 nF | — |
| Reverse Transfer Capacitance (Crss) | 84 pF | — |
| Output Capacitance (Coss) | 1.507 nF | — |
| Power Dissipation (PD, Tc=25°C) | 167 W | — |
| Plage de température de fonctionnement | -55°C to +175°C | -55C to +175C (Tj) |
| Boîtier | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8-43 (Surface Mount) |
| Type de montage | Surface Mount | Surface Mount (exposed pad) |
| AEC-Q101 Qualification | Yes (Automotive Grade) | — |
| Niveau MSL | MSL1 (260°C peak reflow) | [DATA_NEEDED: MSL level] |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Technology | — | N-Channel MOSFET (OptiMOS 5) |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Statut RoHS | — | Compliant |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |